Samsung Unveils AI Memory Chips with 400-Layer NAND Prototype
Samsung unveils AI-focused memory technologies, including a 400-layer NAND prototype and next-generation 3D memory architectures.
SociapaHQ
Samsung Electronics has unveiled a new wave of AI-centric memory technologies, including a prototype NAND flash chip with over 400 layers, and next-generation 3D memory architectures for future artificial intelligence (AI) systems.
The announcements came at the Future of Memory and Storage (FMS) 2026 conference in Santa Clara, California, where Samsung revealed its V10 Bonding V-NAND (BV-NAND) prototype.
The new NAND technology employs a wafer-bonding architecture to increase storage density and improve performance. The prototype provides about a 58% increase in memory density over its previous-generation V9 NAND, and enhancements in read, write and input/output performance, Samsung said.
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AI Memory Push:
The development comes amid growing demand for high-capacity and energy-efficient memory solutions to support AI workloads. As generative AI applications move towards real-time inference, technology companies are seeking faster and more efficient storage systems for data centres and computing infrastructure.
Samsung also showed concept models for zHBM and zNAND-O, next-gen 3D memory architectures for AI applications. zHBM is designed to stack memory vertically on top of AI accelerators, instead of traditional high-bandwidth memory (HBM) placed next to AI processors, to reduce the distance data has to travel and improve bandwidth and energy efficiency.
A future zHBM interface could provide nearly eight times the performance of HBM5, the company said, while its wafer-bonding technique could offer more than 10 times the memory density of traditional HBM5. Samsung also said the architecture could boost energy efficiency three times and reduce thermal resistance by more than 50 percent.
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During the event, Samsung revealed its broader AI memory roadmap for DRAM, NAND and enterprise storage, including next-generation products such as HBM4E, HBM5, LPDDR5X-PIM and advanced enterprise SSD solutions for AI data centres and high-performance computing.
The announcement comes as the global memory industry sees increased demand from AI deployments. Samsung has said long-term customer agreements could eventually contribute 60–70% of its memory sales, reflecting the growing importance of AI infrastructure customers.
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